1 to-220f item symbol ratings unit remarks drain-source voltage v ds 150 v dsx 120 continuous drain current i d 23 pulsed drain current i d(puls] 92 gate-source voltage v gs 30 maximum avalanche current i ar 23 non-repetitive e as 301.1 maximum avalanche energy repetitive e ar 3.7 maximum avalanche energy maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 max. power dissipation p d 37 2.16 operating and storage t ch +150 temperature range t stg isolation voltage v iso 2 electrical characteristics (t c =25c unless otherwise specified) thermal characteristics 2SK3769-01MR fuji power mosfet maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =150v v gs =0v v ds =120v v gs =0v v gs =30v i d =11.5a v gs =10v i d =11.5a v ds =25v v cc =48v i d =11.5a v gs =10v r gs =10 ? min. typ. max. units v v a a na m ? s pf nc v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 3.378 58 c/w c/w symbol bv dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mh v cc =75v i d =23a v gs =10v i f =23a v gs =0v t ch =25c i f =23a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj mj kv/s kv/s w c c kvrms 150 3.0 5.0 25 250 100 77 100 612 740 1100 145 220 10 15 13 19 46 20 30 711 23 35 10 15 69 1.00 1.50 125 0.7 -55 to +150 outline drawings (mm) www.fujielectric.co.jp/fdt/scd super f ap-g series n-channel silicon power mosfet equivalent circuit schematic 200406 v gs =-30v note *1 note *2 note *3 v ds 150v note *4 tc=25c ta=25c t=60sec. f=60hz = < features high speed switching low on-resistance no secondary breakdown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) gate(g) source(s) drain(d) note *1:tch 150c,repetitive and non-repetitive note *2:startingtch=25c,i as =10a,l=4.42mh, v cc =48v,r g =50 ? e as limited by maximum channel temperature and avalanche current. see to the ?avalanche energy? graph note *3:repetitive rating:pulse width limited by maximum channel temperature. see to the ?transient thermal impedance? graph. note *4:i f -i d , -di/dt = 50a/ s,v cc bv dss ,tch 150c = < = < = < = <
2 characteristics 2SK3769-01MR fuji power mosfet 0 25 50 75 100 125 150 0 10 20 30 40 50 allowable power dissipation pd=f(tc) pd [w] tc [ c] 024681012 0 10 20 30 40 50 60 70 6.0v 7.0v 7.5v 20v 10v 8.0v 6.5v vgs=5.5v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 1020304050 0.04 0.08 0.12 0.16 0.20 0.24 7.5v 6.0v rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8.0v 7.0v 6.5v vgs=5.5v -50 -25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=11.5a,vgs=10v
3 2SK3769-01MR fuji power mosfet -50-25 0 255075100125150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 5 10 15 20 25 30 35 0 2 4 6 8 10 12 14 vcc=75v qg [nc] typical gate charge characteristics vgs=f(qg):id=23a,tch=25 c vgs [v] 10 0 10 1 10 2 10 1 10 2 10 3 c [pf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 0 10 1 10 2 10 0 10 1 10 2 typical switching characteristics vs. id t=f(id):vcc=48v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 i as =10a i as =14a i as =23a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=48v,i(av)<=23a
4 2SK3769-01MR fuji power mosfet http://www .fujielectric.co.jp/fdt/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [ c/w] t [sec]
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